BUK7640-100A,118 NXP Semiconductors, BUK7640-100A,118 Datasheet

MOSFET N-CH 100V 37A D2PAK

BUK7640-100A,118

Manufacturer Part Number
BUK7640-100A,118
Description
MOSFET N-CH 100V 37A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets
1.BUK7640-100A118.pdf (8 pages)
2.BUK7640-100A118.pdf (12 pages)

Specifications of BUK7640-100A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
37A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
2293pF @ 25V
Power - Max
138W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.04 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
37 A
Power Dissipation
138000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056027118
BUK7640-100A /T3
BUK7640-100A /T3
Philips Semiconductors
GENERAL DESCRIPTION
N-channel
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
’trench’
features
resistance. It is intended for use in
automotive and general purpose
switching applications.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
December 1999
TrenchMOS
Standard level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
R
R
D
D
DM
PIN
V
DS
DGR
tot
stg
mb
th j-mb
th j-a
1
2
3
GS
, T
j
gate
drain
(no connection possible)
source
drain
technology
very
enhancement
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
low
transistor
the
on-state
device
mode
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
DS
tot
j
DS(ON)
1
2
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
-
Minimum footprint, FR4
board
mb
mb
mb
mb
GS
3
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1
mb
V
GS
= 10 V
SYMBOL
TYP.
MIN.
- 55
50
-
-
-
-
-
-
-
-
g
Product specification
MAX.
BUK7640-100A
100
138
175
37
40
MAX.
MAX.
100
100
149
138
175
1.1
20
37
26
-
d
s
Rev 1.000
UNIT
UNIT
K/W
K/W
UNIT
W
˚C
m
V
V
V
A
A
A
˚C
W
V
A

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BUK7640-100A,118 Summary of contents

Page 1

... Total power dissipation tot T Junction temperature j R Drain-source on-state DS(ON) resistance V GS PIN CONFIGURATION CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS - Minimum footprint, FR4 board 1 Product specification BUK7640-100A MAX. UNIT 100 37 138 W 175 ˚ SYMBOL MIN. MAX. UNIT - 100 V - 100 149 A - 138 175 ˚ ...

Page 2

... 175˚C j CONDITIONS MHz =1 load Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad CONDITIONS -dI /dt = 100 - Product specification BUK7640-100A MIN. TYP. MAX. UNIT 100 - - 4 0. 500 100 108 m MIN. TYP. MAX. UNIT ...

Page 3

... ID/A 100 10 120 140 160 180 f & Zth/(K/W) 0.1 0.01 0.001 120 140 160 180 ); Product specification BUK7640-100A MIN. TYP. MAX ˚C mb RDS(ON)=VDS/ 1us 10us 100us 1ms DC 10ms 100ms 100 10 VDS/V Fig.3. Safe operating area = f single pulse; parameter 0.5 ...

Page 4

... Fig.8. Typical transfer characteristics gfs VGS = 10V ˚C. Fig.9. Typical transconductance 2.5 2 1 -100 = 25 ˚C. Fig.10. Normalised drain-source on-state resistance Product specification BUK7640-100A 175 Gate-source voltage, VGS ( f ID ˚ f Rds(on) normalised to 25degC - 100 150 200 Tmb / degC f(T ) DS(ON) DS(ON)25 ˚ ...

Page 5

... Ciss Coss 10 Crss 0 10 100 Fig.16. Normalised avalanche energy rating. iss oss rss W 5 Product specification BUK7640-100A VDS = 14V VDS = 44V f 175 1.1 1.2 1.3 1.4 1.5 Source-Drain Voltage, VSDS (V) ); conditions parameter T SDS 100 120 140 160 Tmb / f(T ) ...

Page 6

... Avalanche Time, t (ms) AV Fig.18. Maximum permissible repetitive avalanche current(I ) versus avalanche time(t AV inductive loads. December 1999 VDD + - VGS -ID/100 shunt V DSS DD 25º for unclamped AV 6 Product specification BUK7640-100A + RD VDS - RG T.U.T. Fig.19. Switching test circuit. Rev 1.000 VDD ...

Page 7

... Epoxy meets UL94 V0 at 1/8". December 1999 2 -PAK); 3 leads E mounting base 2 scale max. 0.64 1.60 10.30 2.90 15.40 2.60 11 2.54 0.46 1.20 9.70 2.10 14.80 2.20 REFERENCES IEC JEDEC EIAJ 7 Product specification BUK7640-100A SOT404 EUROPEAN ISSUE DATE PROJECTION 98-12-14 99-06-25 Rev 1.000 ...

Page 8

... Philips for any damages resulting from such improper use or sale. December 1999 11.5 9.0 2.0 3.8 5.08 Fig.21. SOT404 : soldering pattern for surface mounting. 8 Product specification BUK7640-100A 17.5 Rev 1.000 ...

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