BUK7640-100A,118 NXP Semiconductors, BUK7640-100A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK7640-100A,118
• Description: MOSFET N-CH 100V 37A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7640-100A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2293pF @ 25V
• Power - Max: 138W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 37 A
• Power Dissipation: 138000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056027118; BUK7640-100A /T3; BUK7640-100A /T3

Philips Semiconductors
December 1999
TrenchMOS
Standard level FET
50
45
40
35
30
25
20
15
10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
5
0
Fig.5. Typical output characteristics, T
0.1
Fig.6. Typical on-state resistance, T
Fig.7. Typical on-state resistance, T
0
0
38
36
34
32
30
28
26
Drain Current, ID (A)
0
Drain-Source On Resistance, RDS(on) (Ohms)
Tj = 25 C
4.8 V
1
0.2
R
5
DS(ON)
5 V
0.4
10
= f(V
Drain-Source Voltage, VDS (V)
0.6
2
15
5.2 V
Drain Current, ID (A)
GS
R
transistor
0.8
I
DS(ON)
); conditions: I
D
20
= f(V
5.4 V
VGS/V
25
1
= f(I
3
DS
)
1.2
30
D
VGS = 10V
)
35
1.4
D
6V
= 25 A;
4
40
4.6 V
1.6
VGS = 10V
j
j
j
Tj = 25 C
= 25 ˚C.
= 25 ˚C.
= 25 ˚C.
45
1.8
4.4 V
4.8 V
8 V
5.2 V
5.4 V
8 V
5 V
6 V
50
2
5
4
Fig.10. Normalised drain-source on-state resistance.
40
35
30
25
20
15
10
gfs/S
5
0
Fig.9. Typical transconductance, T
0
2.5
1.5
0.5
Drain current, ID (A)
70
60
50
40
30
20
10
VDS > ID X RDS(ON)
3
2
1
0
Fig.8. Typical transfer characteristics.
-100
0
a
1
2
-50
R
DS(ON)
Gate-source voltage, VGS (V)
10
3
0
/R
Tj = 25 C
I
D
g
ID/A
4
fs
DS(ON)25 ˚C
= f(V
Tmb / degC
= f(I
50
5
20
Rds(on) normalised to 25degC
GS
D
)
)
6
= f(T
BUK7640-100A
175 C
100
Product specification
7
j
)
30
150
j
8
= 25 ˚C.
Rev 1.000
9
200
40
10