BUK9535-55,127 NXP Semiconductors, BUK9535-55,127 Datasheet - Page 2

• Manufacturer Part Number: BUK9535-55,127
• Description: MOSFET N-CH 55V 34A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9535-55,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 17A, 5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 85W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
April 1998
TrenchMOS
Logic level FET
j
SYMBOL PARAMETER
V
V
I
I
R
mb
SYMBOL PARAMETER
g
C
C
C
t
t
t
t
L
L
L
j
SYMBOL PARAMETER
I
I
V
t
Q
= 25˚C unless otherwise specified
DSS
GSS
d on
r
d off
f
DR
DRM
rr
= 25˚C unless otherwise specified
V
fs
d
d
s
(BR)DSS
GS(TO)
SD
DS(ON)
iss
oss
rss
rr
= 25˚C unless otherwise specified
(BR)GSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
transistor
CONDITIONS
V
V
V
V
I
V
CONDITIONS
V
V
V
V
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
CONDITIONS
I
I
I
V
G
F
F
F
GS
DS
DS
GS
GS
DS
GS
DD
GS
GS
= 25 A; V
= 34 A; V
= 34 A; -dI
= 1 mA;
= 0 V; I
= V
= 55 V; V
= 5 V; V
= 5 V; I
= 25 V; I
= 0 V; V
= 30 V; I
= 5 V; R
= -10 V; V
GS
; I
2
D
D
D
GS
GS
DS
G
D
D
F
= 0.25 mA;
= 1 mA
= 17 A
GS
DS
/dt = 100 A/ s;
= 10
= 15 A
= 15 A;
= 0 V
= 0 V
R
= 25 V; f = 1 MHz
= 30 V
= 0 V;
= 0 V
T
T
T
T
T
T
j
j
j
j
j
j
= 175˚C
= 175˚C
= 175˚C
= 175˚C
= -55˚C
= -55˚C
MIN.
MIN.
MIN.
0.5
55
50
10
12
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
1050
TYP.
0.05
0.02
0.95
0.16
205
110
1.5
3.5
4.5
7.5
1.0
28
14
77
55
48
40
-
-
-
-
-
-
-
-
-
-
Product specification
BUK9535-55
MAX.
MAX.
MAX.
1400
500
245
150
110
136
2.3
1.2
10
10
35
74
21
80
65
34
2
1
-
-
-
-
-
-
-
-
-
-
-
Rev 1.100
UNIT
UNIT
UNIT
m
m
nH
nH
nH
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
V
S
A
A
V
C
A
A
A
A