BUK9535-55,127 NXP Semiconductors, BUK9535-55,127 Datasheet - Page 4

• Manufacturer Part Number: BUK9535-55,127
• Description: MOSFET N-CH 55V 34A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9535-55,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 17A, 5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 85W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

Philips Semiconductors
April 1998
TrenchMOS
Logic level FET
ID/A
100
ID/A
Fig.5. Typical output characteristics, T
I
80
60
40
20
D
Fig.6. Typical on-state resistance, T
45
40
35
30
25
0
70
60
50
40
30
20
10
0
= f(V
0
0
RDS(ON)/mOhm
0
VGS/V =
VGS/V =
Fig.7. Typical transfer characteristics.
Tj/C =
GS
) ; conditions: V
10
R
1
2
I
10
DS(ON)
D
8
7
175
= f(V
2
20
= f(I
transistor
DS
4
); parameter V
D
); parameter V
3
VDS/V
25
30
VGS/V
DS
ID/A
= 25 V; parameter T
6
4
4
40
4.2
GS
5
4.4
4.6
GS
8
j
50
j
= 25 ˚C .
4.8
5
= 25 ˚C .
6
10
60
6.4
6.0
5.8
5.6
5.4
5.2
5.0
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
7
j
4
Fig.9. Normalised drain-source on-state resistance.
gfs/S
a = R
V
2.5
1.5
0.5
Fig.8. Typical transconductance, T
30
25
20
15
10
2.5
1.5
0.5
2
1
0
-100
5
GS(TO)
-100
2
1
0
VGS(TO) / V
a
DS(ON)
max.
min.
typ.
g
Fig.10. Gate threshold voltage.
= f(T
fs
10
-50
-50
/R
= f(I
DS(ON)25 ˚C
j
); conditions: I
BUK959-60
D
20
); conditions: V
0
0
Tmb / degC
= f(T
Tj / C
30
50
50
ID/A
Rds(on) normlised to 25degC
j
); I
D
40
= 1 mA; V
D
100
= 17 A; V
100
DS
Product specification
= 25 V
BUK9535-55
50
150
BUK959-60
j
150
= 25 ˚C .
DS
GS
60
= V
Rev 1.100
= 5 V
200
200
GS
70