PHP45NQ11T,127 NXP Semiconductors, PHP45NQ11T,127 Datasheet - Page 10

• Manufacturer Part Number: PHP45NQ11T,127
• Description: MOSFET N-CH 105V 47A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHP45NQ11T,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 150W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 105V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 105 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058294127::PHP45NQ11T::PHP45NQ11T

NXP Semiconductors
8. Revision history
Table 7.
PHP45NQ11T_2
Product data sheet
Document ID
PHP45NQ11T_2
Modifications:
PHP45NQ11T_1
Revision history
Release date
20091119
20040331
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Data sheet status
Product data sheet
Product specification
Rev. 02 — 19 November 2009
Change notice
-
-
N-channel TrenchMOS standard level FET
PHP45NQ11T
Supersedes
PHP45NQ11T_1
-
© NXP B.V. 2009. All rights reserved.
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