BUK7635-55A,118 NXP Semiconductors, BUK7635-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK7635-55A,118
• Description: MOSFET N-CH 55V 35A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7635-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 872pF @ 25V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056192118; BUK7635-55A /T3; BUK7635-55A /T3

Philips Semiconductors
9397 750 07646
Product specification
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
GS
DS
function of gate-source voltage; typical values.
= 25 V
= 0 V
I D
50
40
30
20
10
(A)
0
0
T j = 175
2
O
C
4
T j = 25
6
O
C
8
I S
(A)
V GS (V)
120
100
80
60
40
20
0
03nb79
0.0
10
Rev. 01 — 10 November 2000
0.5
T j = 175
BUK7535-55A; BUK7635-55A
O
C
1.0
Fig 14. Gate-source voltage as a function of turn-on
T
T j = 25
j
= 25 C; I
1.5
gate charge; typical values.
V GS
(V)
O
V SD (V)
C
10
9
8
7
6
5
4
3
2
1
0
03nb76
0
D
2.0
= 17 A
V DD = 14 V
TrenchMOS™ standard level FET
10
© Philips Electronics N.V. 2000. All rights reserved.
20
V DD = 44 V
Q G (nC)
03nb77
30
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