BUK7635-55A,118 NXP Semiconductors, BUK7635-55A,118 Datasheet - Page 9

• Manufacturer Part Number: BUK7635-55A,118
• Description: MOSFET N-CH 55V 35A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7635-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 872pF @ 25V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056192118; BUK7635-55A /T3; BUK7635-55A /T3

9. Package outline
Fig 16. SOT78 (TO-220AB).
Philips Semiconductors
9397 750 07646
Product specification
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
OUTLINE
VERSION
SOT78
4.5
4.1
A
1.39
1.27
A 1
0.9
0.7
b
IEC
D
L
b 1
1.3
1.0
L 2
D 1
(1)
b 1
0.7
0.4
3-lead TO-220AB
c
JEDEC
15.8
15.2
1
e
D
E
P
REFERENCES
Rev. 01 — 10 November 2000
2
e
D 1
6.4
5.9
0
3
b
BUK7535-55A; BUK7635-55A
10.3
9.7
E
L 1
SC-46
q
scale
EIAJ
5
2.54
e
10 mm
15.0
13.5
L
mounting
base
3.30
2.79
L 1
max.
L 2
Q
3.0
(1)
TrenchMOS™ standard level FET
A
A 1
PROJECTION
3.8
3.6
c
EUROPEAN
P
3.0
2.7
© Philips Electronics N.V. 2000. All rights reserved.
q
2.6
2.2
Q
ISSUE DATE
99-09-13
00-09-07
SOT78
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