BUK7227-100B,118 NXP Semiconductors, BUK7227-100B,118 Datasheet
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BUK7227-100B,118
Specifications of BUK7227-100B,118
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BUK7227-100B,118 Summary of contents
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... BUK7227-100B N-channel TrenchMOS standard level FET Rev. 02 — 17 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... N-channel TrenchMOS standard level FET Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B Graphic symbol mbb076 Version SOT428 © NXP B.V. 2011. All rights reserved ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET Min - - -20 Figure 1 - Figure 1; - ≤ 10 µ -55 - ° Ω ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7227-100B Product data sheet = All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET 03nl31 = 10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7227-100B Product data sheet Conditions see Figure 4 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET Min Typ - - - 71.4 03nk52 t p δ ...
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... G(ext) j measured from drain to centre of die measured from source lead to source bond pad ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B Min Typ Max Unit 100 - - 0 4 0.02 1 µA ...
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... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET 35 DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values ( Forward transconductance as a function of drain current ...
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... GS Fig 10. Gate-source threshold voltage as a function of 03nl29 105 140 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 − 150 junction temperature 2 ...
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... Fig 14. Input, output and reverse transfer capacitances 100 185 ° ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET C iss C oss C rss 0 − function of drain-source voltage; typical values 03nl23 0.9 1.2 V ...
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... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET min 10.4 2.95 2.285 4.57 0.5 9 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK7227-100B v.2 20110217 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 February 2011 Document identifier: BUK7227-100B ...