BUK7227-100B,118 NXP Semiconductors, BUK7227-100B,118 Datasheet - Page 4

• Manufacturer Part Number: BUK7227-100B,118
• Description: MOSFET N-CH 100V 48A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7227-100B,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Mounting Type: Surface Mount
• Power - Max: 167W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 48A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.027 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 48 A
• Power Dissipation: 167000 mW
• Maximum Operating Temperature: + 185 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057719118::BUK7227-100B /T3::BUK7227-100B /T3

NXP Semiconductors
BUK7227-100B
Product data sheet
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
D
10
10
10
1
3
2
1
Limit R
DSon
= V
DS
/ I
All information provided in this document is subject to legal disclaimers.
D
DC
Rev. 02 — 17 February 2011
10
10
N-channel TrenchMOS standard level FET
2
t
100 μ s
1 ms
10 ms
100 ms
p
= 10 μ s
V
DS
(V)
BUK7227-100B
03nl31
10
3
© NXP B.V. 2011. All rights reserved.
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