BUK9610-55A,118 NXP Semiconductors, BUK9610-55A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK9610-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9610-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 68nC @ 5V
• Input Capacitance (ciss) @ Vds: 4307pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 200000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 139 ns
• Rise Time: 155 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056852118; BUK9610-55A /T3; BUK9610-55A /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9610-55A
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
−1
−2
−3
1
1
3
2
10
1
−6
Capped at 75 A
due to package
P
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
t
p
T
R
DSon
10
δ =
−5
= V
T
t
p
t
All information provided in this document is subject to legal disclaimers.
DS
Conditions
see
mounted on printed-circuit board;
minimum footprint
/ I
D
Rev. 02 — 16 February 2011
10
Figure 4
−4
DC
10
10
−3
10
−2
V
DS
N-channel TrenchMOS logic level FET
(V)
P
t
10
p
−1
T
t
100 μs
1 ms
10 ms
100 ms
p
t
BUK9610-55A
p
Min
-
-
= 10 μs
δ =
(s)
03nf86
03nf87
T
t
p
t
10
1
2
Typ
-
50
© NXP B.V. 2011. All rights reserved.
Max
0.75
-
Unit
K/W
K/W
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