BUK9610-55A,118 NXP Semiconductors, BUK9610-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9610-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9610-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 68nC @ 5V
• Input Capacitance (ciss) @ Vds: 4307pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 200000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 139 ns
• Rise Time: 155 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056852118; BUK9610-55A /T3; BUK9610-55A /T3

NXP Semiconductors
BUK9610-55A
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
0
20
V
DD
= 14 V
40
V
DD
= 44 V
(A)
I
S
100
80
60
40
20
0
60
0
All information provided in this document is subject to legal disclaimers.
Q
G
(nC)
03nd71
Rev. 02 — 16 February 2011
80
0.5
T
j
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
(pF)
1.0
8000
6000
4000
2000
C
0
10
as a function of drain-source voltage; typical
values
T
V
j
SD
−2
= 25 °C
(V)
03nd70
N-channel TrenchMOS logic level FET
1.5
10
−1
BUK9610-55A
C
1
C
C
rss
iss
oss
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nd77
(V)
10
2
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