BUK7611-55B,118 NXP Semiconductors, BUK7611-55B,118 Datasheet - Page 8

MOSFET N-CH 55V 75A D2PAK

BUK7611-55B,118

Manufacturer Part Number
BUK7611-55B,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7611-55B,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
157W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
37nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
55V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.011 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
84 A
Power Dissipation
157000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057701118::BUK7611-55B /T3::BUK7611-55B /T3
NXP Semiconductors
BUK7611-55B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
100
30
20
10
75
50
25
0
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
T
j
2
= 175 ° C
6
60
6.5
4
7
T
j
= 25 ° C
7.5
6
Label is V GS (V)
120
8
10
I
All information provided in this document is subject to legal disclaimers.
8
D
V
(A)
GS
03nn42
03nn39
(V)
180
Rev. 3 — 31 January 2011
10
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
1.5
0.5
a
5
4
3
2
1
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK7611-55B
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
T
j
j
03ne89
(°C)
( ° C)
03aa32
180
180
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