BUK7611-55A,118 NXP Semiconductors, BUK7611-55A,118 Datasheet

MOSFET N-CH 55V 75A SOT404

BUK7611-55A,118

Manufacturer Part Number
BUK7611-55A,118
Description
MOSFET N-CH 55V 75A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7611-55A118.pdf (13 pages)

Specifications of BUK7611-55A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
3093pF @ 25V
Power - Max
166W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.011 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
166000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055878118
BUK7611-55A /T3
BUK7611-55A /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V and 24 V loads
Automotive and general purpose
power switching
BUK7611-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 16 June 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
V
see
T
V
T
see
V
T
see
I
R
T
D
j
mb
j
j
j(init)
GS
GS
GS
GS
≥ 25 °C; T
= 175 °C; see
= 25 °C; see
= 65 A; V
Figure
Figure 13
Figure 13
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
sup
j
D
D
≤ 175 °C
mb
GS
= 25 A;
= 25 A;
≤ 55 V;
Figure
= 25 °C;
Figure
= 10 V;
Figure 2
Figure 3
12;
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
12;
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
9
-
Max Unit
55
75
166
22
11
211
V
A
W
mΩ
mΩ
mJ

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BUK7611-55A,118 Summary of contents

Page 1

... BUK7611-55A N-channel TrenchMOS standard level FET Rev. 02 — 16 June 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... N-channel TrenchMOS standard level FET Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 June 2010 BUK7611-55A Graphic symbol mbb076 Version SOT404 © NXP B.V. 2010. All rights reserved ...

Page 3

... GS j(init) 03aa24 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 June 2010 BUK7611-55A N-channel TrenchMOS standard level FET Min Typ - - - - - Figure -55 - ...

Page 4

... D. Conditions see Figure 4 mounted on a printed-circuit board; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 June 2010 BUK7611-55A N-channel TrenchMOS standard level FET 03nd26 = 10 μ 100 μ 100 (V) DS Min Typ - - - 50 03nd27 ...

Page 5

... °C j from source lead to source bond pad ; ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 June 2010 BUK7611-55A Min Typ Max Unit 4 500 µA - 0.05 1 µ ...

Page 6

... GS 9.5 8.5 7.5 6.5 5.5 4 (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 June 2010 BUK7611-55A N-channel TrenchMOS standard level FET 14 DSon Drain-source on-state voltage as a function of gate-source voltage; typical values ( Forward transconductance as a function of drain current ...

Page 7

... V (V) GS Fig 10. Gate-source voltage as a function of turn-on 03aa32 R 120 180 T (°C) j Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 June 2010 BUK7611-55A N-channel TrenchMOS standard level FET ( gate charge; typical values 22 5 ...

Page 8

... Fig 14. Input, output and reverse capacitances as a 140 I S (A) 120 100 = 175 ° 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 June 2010 BUK7611-55A N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nd18 = 25 ° ...

Page 9

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 June 2010 BUK7611-55A N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2010. All rights reserved. ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7611-55A separated from data sheet BUK7511_7611_55A v.1. BUK7511_7611_55A v.1 20010201 (9397 750 07817) BUK7611-55A ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 June 2010 BUK7611-55A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 June 2010 BUK7611-55A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 June 2010 Document identifier: BUK7611-55A ...

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