BUK7611-55A,118 NXP Semiconductors, BUK7611-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK7611-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7611-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 3093pF @ 25V
• Power - Max: 166W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 166000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055878118; BUK7611-55A /T3; BUK7611-55A /T3

NXP Semiconductors
BUK7611-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
a
2.4
1.8
1.2
0.6
0
−60
factor as a function of junction temperature
0
60
(A)
I
S
140
120
100
80
60
40
20
120
0
0
All information provided in this document is subject to legal disclaimers.
T
j
(°C)
03aa28
180
Rev. 02 — 16 June 2010
0.5
T
j
= 175 °C
Fig 14. Input, output and reverse capacitances as a
(pF)
C
1.0
4500
4000
3500
3000
2500
2000
1500
1000
500
T
0
j
10
function of drain-source voltage; typical values
= 25 °C
V
−2
SD
N-channel TrenchMOS standard level FET
(V)
03nd18
C
C
C
oss
iss
rss
1.5
10
−1
BUK7611-55A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nd25
(V)
10
2
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