BUK9635-100A,118 NXP Semiconductors, BUK9635-100A,118 Datasheet

MOSFET N-CH 100V 41A SOT404

BUK9635-100A,118

Manufacturer Part Number
BUK9635-100A,118
Description
MOSFET N-CH 100V 41A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK9635-100A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
34 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
41A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
3573pF @ 25V
Power - Max
149W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.034 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
41 A
Power Dissipation
149000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055657118
BUK9635-100A /T3
BUK9635-100A /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
D
DS
tot
BUK9635-100A
N-channel TrenchMOS logic level FET
Rev. 2 — 9 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
Conditions
T
V
see
T
j
mb
GS
≥ 25 °C; T
Figure
= 25 °C; see
= 5 V; T
1; see
mb
j
≤ 175 °C
= 25 °C;
Figure 2
Figure 3
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Min
-
-
-
Product data sheet
Typ
-
-
-
Max Unit
100
41
149
V
A
W

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BUK9635-100A,118 Summary of contents

Page 1

... BUK9635-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... °C; unclamped j(init) Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 February 2011 BUK9635-100A N-channel TrenchMOS logic level FET Min = Figure 12; ≤ 100 V; ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 February 2011 BUK9635-100A N-channel TrenchMOS logic level FET Min - - -10 Figure 1; - Figure 1 - ≤ 10 µ -55 -55 - ° Ω ...

Page 4

... D D. δ Conditions see Figure 4 mounted on printed-circuit board; SOT404 package; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 February 2011 BUK9635-100A N-channel TrenchMOS logic level FET 03nd14 = 10 μ 100 100 (V) DS Min Typ - - - ...

Page 5

... ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 February 2011 BUK9635-100A N-channel TrenchMOS logic level FET Min Typ Max 100 - - 2 500 - 2 100 ...

Page 6

... V ( (mΩ 2 (V) DS Fig 6. 03aa36 max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 February 2011 BUK9635-100A N-channel TrenchMOS logic level FET 35 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values ( Forward transconductance as a function of drain current ...

Page 7

... GS Fig 10. Gate-source voltage as a function of gate 03aa33 40 R DSon (mΩ 120 180 ( ° Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 February 2011 BUK9635-100A N-channel TrenchMOS logic level FET charge; typical values V ( ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 February 2011 BUK9635-100A N-channel TrenchMOS logic level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nd06 = 25 ° ...

Page 9

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 February 2011 BUK9635-100A N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK9635-100A separated from data sheet BUK9535_9635_100A v.1. Product specification All information provided in this document is subject to legal disclaimers. ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 February 2011 BUK9635-100A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 February 2011 BUK9635-100A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 9 February 2011 Document identifier: BUK9635-100A ...

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