BUK7210-55B/C1,118 NXP Semiconductors, BUK7210-55B/C1,118 Datasheet - Page 3

• Manufacturer Part Number: BUK7210-55B/C1,118
• Description: MOSFET N-CH 55V SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7210-55B/C1,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Mounting Type: Surface Mount
• Gate Charge Qg: 35 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 185 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption
• Power - Max: -
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934062108118

From driving a simple lamp to the sophisticated needs of
power control in engine, body or chassis applications, NXP
power semiconductors are the common answer to many
automotive system power problems.
Our automotive power portfolio draws on a clear technology
focus and NXP is committed to developing this technology in
direct alignment with the needs of leading automotive systems
suppliers worldwide.
NXP’s development, technical support and marketing teams
make for the highest level of service required to support the
automotive market with solutions to power control system
problems.
By providing a complete technology, device and service
capability NXP helps you meet the diverse and rigorous
technical demands of today’s automotive power switching and
control applications, driving the development of tomorrow’s
cars and keeping you ahead of the rest.
The automotive environment has always been a physical
challenge, but developing ecological and commercial
constraints need ever more ingenious and innovative solutions,
which NXP is committed to providing.
Simply, NXP gives you the power to meet the challenges of
individual system design, every step of the way.
Quality and reliability
The quality performance of NXP Power MOSFETs targets the
Zero Defects expectation of automotive customers, achieving
field return rates below 1ppm.
This standard has been achieved through many years of proven
manufacturing quality and continuous improvement initiatives.
The fundamental TrenchMOS building blocks are mature
technologies, used in NXP’s automotive products since as
early as 1998.
Ongoing improvement processes are applied from diffusion,
with increased automation and particle reduction activities,
right through the entire manufacturing process to final
assembly where enhanced test regimes also serve to ensure
the highest possible product quality.
NXP automotive power solutions
Global leadership
Wide selection
Leading-edge technology
Innovative packaging
Highest standards for quality and reliability
Power MOSFETs for Automotive Applications
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Worldwide supplier of discrete power
MOSFETs for automotive systems
Close alignment with automotive partners
Standard products for a wide range of
applications
Unique, made-to-order solutions for high-
volume applications
Pioneer in TrenchMOS
Supplier of TrenchPLUS, with integrated
sensor capabilities
LFPAK for outstanding thermal performance,
package resistance, and reliability
Known Good Die (KGD) program for high-
quality bare die
Design for excellence approach
Zero Defects Program
AEC-Q101 qualified MOSFETs
ISO/TS 16949:2002 plant certification
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