BUK7514-55A,127 NXP Semiconductors, BUK7514-55A,127 Datasheet

MOSFET N-CH 55V 73A SOT78

BUK7514-55A,127

Manufacturer Part Number
BUK7514-55A,127
Description
MOSFET N-CH 55V 73A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7514-55A127.pdf (9 pages)

Specifications of BUK7514-55A,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
73A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
2464pF @ 25V
Power - Max
166W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
73 A
Power Dissipation
149000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055646127
BUK7514-55A
BUK7514-55A
Philips Semiconductors
GENERAL DESCRIPTION
N-channel
standard level field-effect power
transistor in a plastic envelope
available in TO220AB and SOT404 .
Using ’trench’ technology which
features
resistance. It is intended for use in
automotive and general purpose
switching applications.
PINNING
TO220AB & SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
July 2000
TrenchMOS
Standard level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
R
R
R
tab/mb drain
D
D
DM
V
DS
DGR
tot
stg
PIN
th j-mb
th j-a
th j-a
GS
1
2
3
, T
j
DESCRIPTION
gate
drain
source
very
enhancement
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient(TO220AB)
Thermal resistance junction to
ambient(SOT404)
low
transistor
on-state
mode
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
DS
tot
j
DS(ON)
1
2
3
SOT404
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
-
in free air
Minimum footprint, FR4
board
mb
mb
mb
mb
GS
mb
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1
tab
TO220AB
1 2 3
V
GS
= 10 V
SYMBOL
TYP.
MIN.
- 55
60
50
-
-
-
-
-
-
-
-
g
Product specification
MAX.
149
175
55
73
14
MAX.
MAX.
BUK7514-55A
BUK7614-55A
266
166
175
0.9
55
55
20
73
52
-
-
d
s
Rev 1.000
UNIT
UNIT
K/W
K/W
K/W
UNIT
W
˚C
m
V
V
V
A
A
A
˚C
W
V
A

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BUK7514-55A,127 Summary of contents

Page 1

... R Drain-source on-state DS(ON) resistance V GS PIN CONFIGURATION tab TO220AB SOT404 CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS - in free air Minimum footprint, FR4 board 1 Product specification BUK7514-55A BUK7614-55A MAX. UNIT 55 73 149 W 175 ˚ SYMBOL MIN. MAX. UNIT - 266 A - 166 175 ˚ ...

Page 2

... Measured from drain lead 6 mm from package to centre of die Measured from contact screw on tab to centre of die(TO220AB) Measured from upper edge of drain tab to centre of die(SOT404) Measured from source lead to source bond pad CONDITIONS -dI /dt = 100 - Product specification BUK7514-55A BUK7614-55A MIN. TYP. MAX. UNIT 4 0. ...

Page 3

... ID/A 100 120 140 160 180 Fig.3. Safe operating area f & Zth/(K/W) 1 0.1 0.01 0.001 120 140 160 180 1E- Product specification BUK7514-55A BUK7614-55A MIN. TYP. MAX 125 = 25 ˚C mb RDS(ON)=VSD/ VSD ˚ f single pulse; parameter 0.5 0.2 0.1 0.05 ...

Page 4

... Fig.8. Typical transfer characteristics f 6.0 gfs 6.5 10 7.0 7.5 5 8.0 10 ˚C. Fig.9. Typical transconductance 1.5 1 0.5 0 -100 ˚C. Fig.10. Normalised drain-source on-state resistance Product specification BUK7514-55A BUK7614-55A o Tj/C= 175 VGS conditions parameter ID ˚ f(I ); conditions 30V TrenchMOS - 100 150 f DS(ON) DS(ON)25 ˚ ...

Page 5

... F WDSS% 98% 120 110 100 Fig.16. Normalised avalanche energy rating. W Ciss Coss Crss 10 100 , iss oss rss 5 Product specification BUK7514-55A BUK7614-55A VDS = 14V VDS = 44V conditions parameter [PICTURE] ); conditions parameter T SDS 100 120 140 160 Tmb / f(T ); conditions DSS 180 Rev 1.000 ...

Page 6

... Avalanche Time, t (ms) AV Fig.18. Maximum permissible repetitive avalanche current(I ) versus avalanche time(t AV inductive loads. July 2000 VDD + - VGS -ID/100 shunt V DSS for unclamped AV 6 Product specification BUK7514-55A BUK7614-55A + RD VDS - RG T.U.T. Fig.19. Switching test circuit. Rev 1.000 VDD ...

Page 7

... Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". July 2000 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.20. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification BUK7514-55A BUK7614-55A 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.000 ...

Page 8

... Epoxy meets UL94 V0 at 1/8". July 2000 2 -PAK); 3 leads E mounting base 2 scale max. 0.64 1.60 10.30 2.90 15.40 2.60 11 2.54 0.46 1.20 9.70 2.10 14.80 2.20 REFERENCES IEC JEDEC EIAJ 8 Product specification BUK7514-55A BUK7614-55A SOT404 EUROPEAN ISSUE DATE PROJECTION 98-12-14 99-06-25 Rev 1.000 ...

Page 9

... Philips for any damages resulting from such improper use or sale. July 2000 11.5 9.0 2.0 3.8 5.08 Fig.22. SOT404 : soldering pattern for surface mounting. 9 Product specification BUK7514-55A BUK7614-55A 17.5 Rev 1.000 ...

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