BUK7514-55A NXP Semiconductors, BUK7514-55A Datasheet
BUK7514-55A
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BUK7514-55A Summary of contents
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... BUK7514-55A N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... N-channel TrenchMOS standard level FET Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A Graphic symbol mbb076 Version SOT78A © NXP B.V. 2011. All rights reserved ...
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... I D (%) 150 200 0 T (° Fig 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A N-channel TrenchMOS standard level FET Min - - - -55 - Ω 003aaf238 50 100 150 T mb ≥ ...
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... All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A N-channel TrenchMOS standard level FET 120 100 140 Normalised drain-source non-repetitive avalanche energy as a function of mounting-base temperature Min Typ - - - ...
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... °C j measured from source lead to source bond pad ° ° ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A Min Typ Max Unit 4 0.05 10 µ 500 µ 100 ...
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... DS Fig 7. 003aaf243 (V) GS Fig 9. 003aaf245 60 80 100 I (A) D Fig 11. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A N-channel TrenchMOS standard level FET 30 V (V) = 5.5 GS DS(on) (mΩ °C j Drain-source on-state resistance as a function of drain current ...
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... Fig 13. Sub-threshold drain current as a function of 003aaf249 (V) DS Fig 15. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A N-channel TrenchMOS standard level FET −1 −2 − typical −4 −5 − °C; V ...
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... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7514-55A separated form data sheet BUK7514_7614-55A_1. BUK7514_7614-55A_1 20000701 BUK7514-55A Product data sheet N-channel TrenchMOS standard level FET ...
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... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 April 2011 Document identifier: BUK7514-55A ...