BUK7514-55A NXP Semiconductors, BUK7514-55A Datasheet

MOSFET Power RAIL MOSFET

BUK7514-55A

Manufacturer Part Number
BUK7514-55A
Description
MOSFET Power RAIL MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7514-55A

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
73 A
Power Dissipation
149 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
BUK7514-55A,127

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
BUK7514-55A
Manufacturer:
NXP
Quantity:
51 000
Part Number:
BUK7514-55A
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche Ruggedness
E
D
DS
tot
DS(AL)S
DSon
BUK7514-55A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
AEC Q101 compliant
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
T
V
T
I
R
T
unclamped
D
j
mb
j
j(init)
GS
GS
≥ 25 °C; T
= 25 °C
= 50 A; V
= 25 °C
= 10 V; I
= 50 Ω; V
= 25 °C;
sup
j
D
≤ 175 °C
GS
= 25 A;
≤ 25 V;
Low conduction losses due to low
on-state resistance
= 5 V;
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
12
-
Max
55
73
166
14
125
Unit
V
A
W
mΩ
mJ

Related parts for BUK7514-55A

BUK7514-55A Summary of contents

Page 1

... BUK7514-55A N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... N-channel TrenchMOS standard level FET Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A Graphic symbol mbb076 Version SOT78A © NXP B.V. 2011. All rights reserved ...

Page 3

... I D (%) 150 200 0 T (° Fig 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A N-channel TrenchMOS standard level FET Min - - - -55 - Ω 003aaf238 50 100 150 T mb ≥ ...

Page 4

... All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A N-channel TrenchMOS standard level FET 120 100 140 Normalised drain-source non-repetitive avalanche energy as a function of mounting-base temperature Min Typ - - - ...

Page 5

... °C j measured from source lead to source bond pad ° ° ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A Min Typ Max Unit 4 0.05 10 µ 500 µ 100 ...

Page 6

... DS Fig 7. 003aaf243 (V) GS Fig 9. 003aaf245 60 80 100 I (A) D Fig 11. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A N-channel TrenchMOS standard level FET 30 V (V) = 5.5 GS DS(on) (mΩ °C j Drain-source on-state resistance as a function of drain current ...

Page 7

... Fig 13. Sub-threshold drain current as a function of 003aaf249 (V) DS Fig 15. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A N-channel TrenchMOS standard level FET −1 −2 − typical −4 −5 − °C; V ...

Page 8

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...

Page 9

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7514-55A separated form data sheet BUK7514_7614-55A_1. BUK7514_7614-55A_1 20000701 BUK7514-55A Product data sheet N-channel TrenchMOS standard level FET ...

Page 10

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 11

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7514-55A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 April 2011 Document identifier: BUK7514-55A ...

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