BUK7514-55A NXP Semiconductors, BUK7514-55A Datasheet - Page 4

• Manufacturer Part Number: BUK7514-55A
• Description: MOSFET Power RAIL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7514-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Power Dissipation: 149 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7514-55A,127

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7514-55A
Product data sheet
Symbol
R
R
Fig 3.
Fig 5.
th(j-mb)
th(j-a)
I
(A)
DM
10
10
10
1
3
2
currents as a function of drain-source voltage
Safe operating area; continuous and peak drain
Transient thermal impedance from junction to mounting base as a function of pulse duration
1
Thermal characteristics
R
DS(on)
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
= V
D.C.
DS
10
/ I
D
Z
t
10 μs
100 μs
1 ms
10 ms
100 ms
p
(K/W)
th(j-mb)
10
= 1 μs
10
10
10
2
−1
−2
−3
1
10
V
−7
All information provided in this document is subject to legal disclaimers.
DS
δ = 0.5
0.05
0.02
0.2
0.1
003aaf239
(V)
0
10
−6
10
Conditions
in free air
10
Rev. 2 — 26 April 2011
3
−5
10
−4
10
−3
Fig 4.
P
10
WDSS
−2
(%)
120
t
80
40
p
10
0
20
avalanche energy as a function of
mounting-base temperature
T
Normalised drain-source non-repetitive
−1
N-channel TrenchMOS standard level FET
003aaf240
δ =
1
t
p
T
t
(s)
t
p
10
60
BUK7514-55A
Min
-
-
100
Typ
-
60
140
© NXP B.V. 2011. All rights reserved.
T
(mb)
003aaf251
Max
0.9
-
(°C)
180
Unit
K/W
K/W
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