BUK7613-75B,118 NXP Semiconductors, BUK7613-75B,118 Datasheet - Page 6

• Manufacturer Part Number: BUK7613-75B,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7613-75B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 157W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 157000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057739118::BUK7613-75B /T3::BUK7613-75B /T3

NXP Semiconductors
BUK7613-75B
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
10
D
250
200
150
100
50
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
Label is V
2
2
GS
4
(V)
min
typ
6
4
10
20
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
max
V
All information provided in this document is subject to legal disclaimers.
GS
8
V
DS
(V)
03nm78
03aa35
(V)
Rev. 2 — 17 November 2010
10
6
Fig 6.
Fig 8.
R
(mΩ)
DSon
g
(S)
fs
30
25
20
15
10
40
30
20
10
5
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
25
10
BUK7613-75B
50
15
75
V
© NXP B.V. 2010. All rights reserved.
GS
I
D
03nm77
03nm75
(V)
(A)
100
20
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