BUK7610-55AL,118 NXP Semiconductors, BUK7610-55AL,118 Datasheet - Page 2

• Manufacturer Part Number: BUK7610-55AL,118
• Description: MOSFET N-CH TRENCH 55V D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7610-55AL,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 124nC @ 10V
• Input Capacitance (ciss) @ Vds: 6280pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Gate Charge Qg: 124 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 122 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059225118

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7610-55AL_2
Product data sheet
Pin
1
2
3
mb
Type number
BUK7610-55AL
Symbol Parameter
V
V
V
I
I
P
T
T
Avalanche ruggedness
E
E
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
DS(AL)R
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
non-repetitive
drain-source avalanche
energy
repetitive drain-source
avalanche energy
source current
peak source current
Pinning
Symbol
G
D
S
D
Ordering information
Limiting values
Package
Name
D2PAK
Description
gate
drain
source
mounting base;
connected to drain
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead
cropped)
Conditions
T
R
T
T
T
T
T
I
V
inductive load
see
T
T
t
D
p
j
mb
mb
mb
mb
mb
mb
mb
GS
GS
≤ 10 μs; pulsed; T
≥ 25 °C; T
= 75 A; V
Figure 3
= 25 °C; V
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 25 °C
= 10 V; T
= 20 kΩ
sup
Rev. 02 — 9 January 2008
j
≤ 175 °C
j(init)
p
GS
GS
≤ 55 V; R
≤ 10 μs; pulsed
GS
Figure 2
= 10 V; see
= 10 V; see
= 25 °C; unclamped
= 10 V; see
mb
= 25 °C
Simplified outline
GS
= 50 Ω;
SOT404 (D2PAK)
Figure 4
Figure 4
Figure 4
1
N-channel TrenchMOS standard level FET
mb
2
and
and
3
1
1
[1][2]
[4][5]
[1][2]
[3]
[3]
[6]
[3]
BUK7610-55AL
-20
-55
Min
-
-
-
-
-
-
-
-55
-
-
-
-
-
Graphic symbol
Max
55
55
20
122
75
75
490
300
175
175
1.1
-
122
75
490
mbb076
G
© NXP B.V. 2008. All rights reserved.
D
S
Version
SOT404
Unit
V
V
V
A
A
A
A
W
°C
°C
J
J
A
A
A
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