BUK7515-100A,127 NXP Semiconductors, BUK7515-100A,127 Datasheet - Page 4

• Manufacturer Part Number: BUK7515-100A,127
• Description: MOSFET N-CH 100V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7515-100A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055409127; BUK7515-100A; BUK7515-100A

Philips Semiconductors
June 2003
TrenchMOS
Standard level FET
gfs/S
I
ID/A
D
Fig.7. Typical on-state resistance, T
100
90
80
70
60
50
40
30
20
10
Fig.9. Typical transconductance, T
16
15
14
13
12
11
10
80
60
40
20
0
= f(V
0
0
5
0
RDS(ON)/mOhm
Fig.8. Typical transfer characteristics.
R
GS
DS(ON)
g
) ; conditions: V
fs
1
= f(I
20
= f(V
D
); conditions: V
2
10
transistor
GS
); conditions I
40
VGS/V
3
Tj/C =
VGS/V
ID/A
DS
= 25 V; parameter T
4
60
175
15
DS
D
= 25 V
5
= 25 A;
j
80
25
j
= 25 ˚C.
= 25 ˚C.
6
20
100
7
j
4
Fig.10. Normalised drain-source on-state resistance.
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
a = R
V
-100
2.5
1.5
0.5
5
4
3
2
1
0
GS(TO)
I
D
3
2
1
0
VGS(TO) / V
-100
= f(V
DS(ON)
Fig.12. Sub-threshold drain current.
a
max.
min.
typ.
Fig.11. Gate threshold voltage.
= f(T
-50
GS)
/R
-50
DS(ON)25 ˚C
; conditions: T
1
j
); conditions: I
0
0
2%
= f(T
Tj / C
2
Tmb / degC
50
50
j
Rds(on) normalised to 25degC
); I
j
D
= 25 ˚C; V
typ
D
= 1 mA; V
Sub-Threshold Conduction
100
= 25 A; V
BUK7515-100A
3
100
Product specification
98%
150
BUK759-60
150
DS
DS
4
GS
= V
= V
= 10 V
Rev 1.200
200
200
GS
GS
5