BUK9107-55ATE,118 NXP Semiconductors, BUK9107-55ATE,118 Datasheet - Page 5

• Manufacturer Part Number: BUK9107-55ATE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9107-55ATE,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 108nC @ 5V
• Input Capacitance (ciss) @ Vds: 5836pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0062 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 140 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056982118; BUK9107-55ATE /T3; BUK9107-55ATE /T3

Philips Semiconductors
7. Thermal characteristics
Table 4:
9397 750 09138
Product data
Symbol
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-a)
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
ambient
thermal resistance from junction to
mounting base
10 -1
10 -2
10 -3
7.1 Transient thermal impedance
1
10 -6
10 -5
10 -4
Rev. 01 — 7 February 2002
Conditions
vertical in still air; SOT263B
package
mounted on printed circuit board;
minimum footprint; SOT426
package
Figure 4
10 -3
10 -2
BUK91/9907-55ATE
10 -1
P
Min
-
-
-
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
TrenchPLUS logic level FET
t p
1
T
Typ
-
-
-
t p (s)
=
t p
T
t
10
Max
60
50
0.55
Unit
K/W
K/W
K/W
5 of 17