BUK9107-55ATE,118 NXP Semiconductors, BUK9107-55ATE,118 Datasheet - Page 7

• Manufacturer Part Number: BUK9107-55ATE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9107-55ATE,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 108nC @ 5V
• Input Capacitance (ciss) @ Vds: 5836pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0062 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 140 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056982118; BUK9107-55ATE /T3; BUK9107-55ATE /T3

Philips Semiconductors
Table 5:
T
9397 750 09138
Product data
Symbol
L
L
Source-drain diode
V
t
Q
rr
j
d
s
SD
r
= 25 C unless otherwise specified.
Characteristics
Parameter
internal drain inductance
internal source inductance
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
…continued
Conditions
from upper edge of drain
mounting base to centre of
die
from source lead to source
bond pad
I
Figure 17
I
V
S
S
GS
= 25 A; V
= 20 A; dI
= 10 V; V
Rev. 01 — 7 February 2002
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
BUK91/9907-55ATE
Min
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
TrenchPLUS logic level FET
Typ
2.5
7.5
0.85
85
250
Max
-
-
1.2
-
-
Unit
nH
nH
V
ns
nC
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