STN3N45K3 STMicroelectronics, STN3N45K3 Datasheet - Page 4
![MOSFET N-CH 450V 0.6A SOT-223](/photos/37/61/376164/sot223_sml.jpg)
STN3N45K3
Manufacturer Part Number
STN3N45K3
Description
MOSFET N-CH 450V 0.6A SOT-223
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet
1.STN3N45K3.pdf
(12 pages)
Specifications of STN3N45K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.8 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
450V
Current - Continuous Drain (id) @ 25° C
600mA
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
6nC @ 10V
Input Capacitance (ciss) @ Vds
150pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.8 Ohms
Drain-source Breakdown Voltage
450 V
Gate-source Breakdown Voltage
3 V
Continuous Drain Current
0.6 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
6 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10649-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STN3N45K3
Manufacturer:
STMicroelectronics
Quantity:
3 150
Part Number:
STN3N45K3
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 5.
Table 6.
Table 7.
Symbol
V
Symbol
Symbol
C
V
R
t
t
(BR)DSS
d(on)
d(off)
C
I
I
C
C
Q
GS(th)
Q
= 25 °C unless otherwise specified)
DS(on
GSS
R
DSS
Q
t
t
oss
r
f
iss
rss
gs
gd
G
g
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 17206 Rev 2
V
R
(see
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
DD
GS
DD
DS
DS
GS
DS
GS
G
= 1 mA, V
= 4.7 Ω, V
= Max rating
= Max rating, T
= 25 V, f = 1 MHz, V
= 10 V
= 225 V, I
= ± 20 V
= V
= 10 V, I
= 360 V, I
Figure
Figure
Test conditions
Test conditions
Test conditions
GS
, I
2)
3)
GS
D
D
GS
STN3N45K3, STQ3N45K3-AP, STU3N45K3
D
D
= 50 µA
= 0.5 A
= 0
= 0.5 A,
= 1.8 A,
= 10 V
C
=125 °C
GS
= 0
Min.
Min.
Min.
450
-
3
-
-
-
Typ.
TBD
TBD
TBD
TBD
Typ.
Typ.
TBD
TBD
TBD
3.75
150
3.2
30
6
6
Max.
Max.
± 10
Max
4.5
3.8
50
1
-
-
-
-
Unit
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
V
V