STN3N45K3 STMicroelectronics, STN3N45K3 Datasheet - Page 5
![MOSFET N-CH 450V 0.6A SOT-223](/photos/37/61/376164/sot223_sml.jpg)
STN3N45K3
Manufacturer Part Number
STN3N45K3
Description
MOSFET N-CH 450V 0.6A SOT-223
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet
1.STN3N45K3.pdf
(12 pages)
Specifications of STN3N45K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.8 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
450V
Current - Continuous Drain (id) @ 25° C
600mA
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
6nC @ 10V
Input Capacitance (ciss) @ Vds
150pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.8 Ohms
Drain-source Breakdown Voltage
450 V
Gate-source Breakdown Voltage
3 V
Continuous Drain Current
0.6 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
6 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10649-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STN3N45K3
Manufacturer:
STMicroelectronics
Quantity:
3 150
Part Number:
STN3N45K3
Manufacturer:
ST
Quantity:
20 000
STN3N45K3, STQ3N45K3-AP, STU3N45K3
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Table 9.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
I
BV
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
GSO
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Doc ID 17206 Rev 2
I
I
V
I
V
(see
Igs=± 1 mA (open drain)
SD
SD
SD
DD
DD
= 1.8 A, V
= 1.8 A, di/dt = 100 A/µs
= 1.8 A, di/dt = 100 A/µs
= 100 V (see
= 100 V, T
Figure
Test conditions
Test conditions
7)
GS
j
= 150 °C
= 0
Figure
7)
Electrical characteristics
Min.
Min
30
-
-
-
-
Typ. Max. Unit
TBD
TBD
TBD
TBD
TBD
TBD
Typ
-
TBD
Max Unit
1.8
7.2
nC
nC
ns
ns
A
A
V
A
A
5/12
V