IRF5803D2TRPBF International Rectifier, IRF5803D2TRPBF Datasheet
IRF5803D2TRPBF
Specifications of IRF5803D2TRPBF
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IRF5803D2TRPBF Summary of contents
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... HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. ...
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IRF5803D2 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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PULSE WIDTH Tj = 25°C -2.7V 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 20µs PULSE ...
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IRF5803D2 2000 0V 100 KHZ C iss = SHORTED C rss = C gd 1500 C oss = Ciss 1000 500 Coss Crss 0 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0. SINGLE ...
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IRF5803D2 0.20 0.15 0. -3.4A 0.05 0.00 4.0 8.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge ...
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-250µA 2.4 2.0 1.6 -75 -50 - Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com Power Mosfet Characteristics 0.001 ...
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IRF5803D2 ard V o lta Fig ...
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Schottky Diode Characteristics 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 0.0001 Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 180 160 140 120 100 ...
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IRF5803D2 SO-8 Package Details 0.25 [.010 NOT ES: 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ...
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SO-8 Tape and Reel ...