IRF5803D2TRPBF International Rectifier, IRF5803D2TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF5803D2TRPBF
• Description: MOSFET P-CH 40V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF5803D2TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 3.4A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 112mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 190 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3.4 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 25 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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2.8
2.4
2.0
1.6
-75
-50
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
-25
T J , Temperature ( °C )
0
25
I D = -250µA
50
Power Mosfet Characteristics
75
100 125
150
30
25
20
15
10
5
0
0.001
Fig 16. Typical Power Vs. Time
0.010
0.100
Time (sec)
IRF5803D2
1.000
10.000
100.000
7