IRF5803D2TRPBF International Rectifier, IRF5803D2TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF5803D2TRPBF
• Description: MOSFET P-CH 40V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF5803D2TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 3.4A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 112mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 190 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3.4 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 25 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig 9. Maximum Drain Current Vs.
25
100
0.1
10
0.00001
1
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C

(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
Power Mosfet Characteristics
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
0.1
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS

1. Duty factor D = t / t
2. Peak T = P
R
Notes:
Pulse Width
Duty Factor
G
V
t
V
d(on)
GS
GS
1
J
V
DS
t
r
DM
µs
x Z
1
IRF5803D2

thJA
P
2
DM
+ T
10
D.U.T.
A
t
1
R
t
t
d(off)
D
2
t
f
100
-
+
V
DD
5