IRF5803D2TRPBF International Rectifier, IRF5803D2TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF5803D2TRPBF
• Description: MOSFET P-CH 40V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF5803D2TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 3.4A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 112mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 190 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3.4 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 25 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF5803D2
6
0.20
0.15
0.10
0.05
0.00
V
G
Fig 14a. Basic Gate Charge Waveform
4.0
Fig 12. Typical On-Resistance Vs.
Q
GS
-V GS, Gate -to -Source Voltage (V)
8.0
Gate Voltage
Charge
Q
Q
GD
G
I D = -3.4A
Power Mosfet Characteristics
12.0
16.0
0.40
0.30
0.20
0.10
0.00
0.0
12V
Fig 13. Typical On-Resistance Vs.
Fig 14b. Gate Charge Test Circuit
V
GS
Same Type as D.U.T.
Current Regulator
.2 F
VGS = -4.5V
-I D , Drain Current ( A )
50K
-3mA
Drain Current
Current Sampling Resistors
5.0
.3 F
I
G
D.U.T.
VGS = -10V
I
10.0
D
www.irf.com
+
-
V
DS
15.0