IRF5803D2TRPBF International Rectifier, IRF5803D2TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF5803D2TRPBF
• Description: MOSFET P-CH 40V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF5803D2TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 3.4A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 112mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 190 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3.4 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 25 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
100
0.1
100
10
0.1
10
1
1
Fig 3. Typical Transfer Characteristics
0.1
2.0
Fig 1. Typical Output Characteristics
-V
3.0
-V DS , Drain-to-Source Voltage (V)
GS
, Gate-to-Source Voltage (V)
4.0
1
-2.7V

5.0
T = 25 C
J

20µs PULSE WIDTH
Tj = 25°C
V
20µs PULSE WIDTH
DS
°
6.0
10
Power Mosfet Characteristics
= -25V

T = 150 C
J
TOP
BOTTOM - 2.7V
7.0
°
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-15V
VGS
100
8.0
0.01
100
0.1
2.0
1.5
1.0
0.5
0.0
10
1
Fig 2. Typical Output Characteristics
-60 -40 -20
0.1

I =
D
Fig 4. Normalized On-Resistance
-3.4A
T , Junction Temperature ( C)
-V DS , Drain-to-Source Voltage (V)
J
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
-2.7V
IRF5803D2
20µs PULSE WIDTH
Tj = 125°C
10

V
TOP
BOTTOM - 2.7V
GS
°
=
-10V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-
-15V
VGS
3
100