IRF7233TRPBF International Rectifier, IRF7233TRPBF Datasheet
IRF7233TRPBF
Specifications of IRF7233TRPBF
IRF7233TRPBF
IRF7233TRPBFTR
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IRF7233TRPBF Summary of contents
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... Available in Tape & Reel l Lead-Free l Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized ...
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IRF7233PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source ...
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VGS TOP - 7.5V - 5.0V - 4.0V - 3. 2.5V - 2.0V BOTTOM - 1. 20µs PULSE WIDTH -1. 25° Drain-to-Source ...
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IRF7233PbF 6000 1kHz iss rss oss ds gd 5000 C iss 4000 3000 C oss C ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) ...
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IRF7233PbF SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER AS ...
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SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...