IRF7233TRPBF International Rectifier, IRF7233TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7233TRPBF
• Description: MOSFET P-CH 12V 9.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7233TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 9.5 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 49 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7233PBFTR; IRF7233TRPBF; IRF7233TRPBFTR

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10.0
8.0
6.0
4.0
2.0
0.0
100
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
140
120
100
80
60
40
20
Fig 10. Maximum Avalanche Energy
0
25
Starting T , Junction Temperature ( C)
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
50
Vs. Drain Current
J
J
IRF7233PbF
75
DM
x Z
1
thJA
P
2
DM
1
100
+ T
TOP
BOTTOM
A
t
1
t
2
125
-4.2A
-7.6A
-9.5A
°
I D
5
10
150