IRF7233TRPBF International Rectifier, IRF7233TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7233TRPBF
• Description: MOSFET P-CH 12V 9.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7233TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 9.5 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 49 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7233PBFTR; IRF7233TRPBF; IRF7233TRPBFTR

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Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
100
10
80
60
40
20
1
0
1.0
0
TOP
BOTTOM - 1.5V
-V
-V
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
GS
VGS
DS
2
1.5
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
4
-1.5V
2.0
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
6
T = 25°C
J
= -10V
2.5
T = 150°C
J
8
3.0
10
A
A
Fig 2. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
80
60
40
20
Fig 4. Normalized On-Resistance
0
-60 -40 -20
0
TOP
BOTTOM - 1.5V
I =
D
-9.5A
-V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
- 7.5V
T , Junction Temperature ( C)
VGS
Vs. Temperature
DS
2
J
, Drain-to-Source Voltage (V)
0
IRF7233PbF
20 40
4
-1.5V
60 80 100 120 140 160
20µs PULSE WIDTH
T = 150°C
6
J
V
°
GS
8
=
-4.5V
3
10
A