IRF7233TRPBF International Rectifier, IRF7233TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7233TRPBF
• Description: MOSFET P-CH 12V 9.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7233TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 9.5 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 49 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7233PBFTR; IRF7233TRPBF; IRF7233TRPBFTR

IRF7233PbF
4
100
6000
5000
4000
3000
2000
10
1
0.0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0
Drain-to-Source Voltage
T = 150°C
J
-V
-V
C
C
C
SD
2
rss
iss
oss
DS
Forward Voltage
V
C
C
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
1.0
4
= 0V,
= C
= C
= C
T = 25°C
J
gs
gd
ds
+ C
+ C
6
gd
gd
f = 1kHz
, C
2.0
8
ds
SHORTED
V
GS
10
= 0V
3.0
12
A
A
1000
100
10
10
Fig 8. Maximum Safe Operating Area
1
8
6
4
2
0
0.1
0
T
T
Single Pulse
Fig 6. Typical Gate Charge Vs.
I =
A
J
D
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-V
-9.5A
Gate-to-Source Voltage
10
DS
°
Q , Total Gate Charge (nC)
°
, Drain-to-Source Voltage (V)
G
20
1
BY R
30
DS(on)
40
V
DS
www.irf.com
10
=-10V
100us
1ms
10ms
50
60
100
70