IRF7233TRPBF International Rectifier, IRF7233TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7233TRPBF
• Description: MOSFET P-CH 12V 9.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7233TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 9.5 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 49 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7233PBFTR; IRF7233TRPBF; IRF7233TRPBFTR

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Electrical Characteristics @ T
‚
IRF7233PbF
Source-Drain Ratings and Characteristics
Notes:
R
V
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
I
SM
DSS
d(on)
r
d(off)
f
S
rr
GSS
DS(on)
fs
(BR)DSS
(BR)DSS
GS(th)
2
iss
oss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤
(BR)DSS
max. junction temperature.
/∆T
J
Static Drain-to-Source On-Resistance
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
When mounted on 1 inch square copper board, t<10 sec
R
Starting T
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.013 0.020
-0.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2400 –––
––– 2220 –––
––– 0.001 –––
–––
––– 4530 6000
–––
–––
–––
-14
-12
3.3
G
= 25Ω, I
0.023 0.033
–––
–––
–––
–––
–––
––– -100
–––
540
–––
––– -100
370
–––
9.3
49
22
26
77
43
35
J
= 25°C, L = 1.3mH
AS
–––
–––
–––
–––
-1.0
100
–––
–––
–––
–––
-1.2
-10
= 9.5A.
-76
74
14
32
-2.5
65
52
V/°C
µA
nC
nA
pF
nC
ns
ns
V
V
Ω
V
S
V
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0kHz
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = 100A/µs
showing the
T
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
= -9.5A
= -9.5A
= 25°C, I
= 25°C, I
= 1.0Ω
= 6.2Ω ‚
= 0V
= 0V, I
= 0V, I
= -4.5V, I
= -2.5V, I
= V
= -10V, I
= -12V, V
= -9.6V, V
= -12V, V
= -12V
= 12V
= -10V
= -5.0V‚
= -10V
= -10V
GS
Conditions
, I
D
D
S
F
D
Conditions
D
= -5.0mA
= -250µA
= -2.5A
= -2.5A, V
D
D
GS
GS
= -250µA
GS
= -9.5A
= -9.5A ‚
= -6.0A ‚
‚
= 0V
= 0V, T
= 0V
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V ‚
D
S