IRF7220TRPBF International Rectifier, IRF7220TRPBF Datasheet

MOSFET P-CH 14V 11A 8-SOIC

IRF7220TRPBF

Manufacturer Part Number
IRF7220TRPBF
Description
MOSFET P-CH 14V 11A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7220TRPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 11A, 4.5V
Drain To Source Voltage (vdss)
14V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
125nC @ 5V
Input Capacitance (ciss) @ Vds
8075pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
12 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 11 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
84 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7220PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7220TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7220TRPBF
Quantity:
10 420
l
l
l
l
l
Thermal Resistance
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
www.irf.com
V
I
I
I
P
P
E
V
T
R
D
D
DM
J,
DS
D
D
AS
GS
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
ƒ
@ -4.5V
@ -4.5V
G
S
S
S
1
2
3
4
Top View
HEXFET
8
7
6
5
IRF7220PbF
-55 to + 150
Max.
Max.
±8.8
0.02
D
D
±11
±88
110
± 12
50
D
D
-14
2.5
1.6
A
SO-8
®
R
DS(on)
Power MOSFET
V
DSS
= 0.012Ω
= -14V
Units
Units
W/°C
°C/W
mJ
°C
V
A
V
1
10/6/04

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IRF7220TRPBF Summary of contents

Page 1

... Available in Tape & Reel l Lead-Free l Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP -4.5V -4.0V -3.0V -2.0V -1.8V -1.6V 100 -1.4V BOTTOM -1.2V 10 -1.2V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T ...

Page 4

1kHz iss rss gd 9000 oss iss 8000 7000 6000 C oss 5000 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL ...

Page 6

SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010] NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ...

Page 7

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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