IRF7220TRPBF International Rectifier, IRF7220TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7220TRPBF
• Description: MOSFET P-CH 14V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7220TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V
• Drain To Source Voltage (vdss): 14V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 125nC @ 5V
• Input Capacitance (ciss) @ Vds: 8075pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 11 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 84 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7220PBFTR

4
10000
100
9000
8000
7000
6000
5000
4000
0.1
10
1
0.0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
T = 150°C
1
J
Drain-to-Source Voltage
C
C
C
-V
-V
iss
oss
rss
0.5
SD
DS
Forward Voltage
V
C
C
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25°C
= 0V,
J
= C
= C
= C
1.0
gs
ds
gd
+ C
+ C
gd
gd
f = 1kHz
1.5
, C
ds
SHORTED
2.0
V
GS
= 0V
2.5
10
A
A
1000
100
10
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
A
J
= 25 C
= 150 C
-11A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
-V
20
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
40
1
BY R
60
DS(on)
V
DS
=-10V
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10
80
100us
1ms
10ms
100
100
120