IRF7220TRPBF International Rectifier, IRF7220TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7220TRPBF
• Description: MOSFET P-CH 14V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7220TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V
• Drain To Source Voltage (vdss): 14V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 125nC @ 5V
• Input Capacitance (ciss) @ Vds: 8075pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 11 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 84 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7220PBFTR

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‚
Source-Drain Ratings and Characteristics
Notes:
Electrical Characteristics @ T
I
I
V
t
Q
SM
S
rr
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
d(on)
d(off)
2
r
f
SD
DSS
rr
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤
fs
(BR)DSS
GS(th)
GSS
max. junction temperature.
iss
oss
rss
g
gs
gd
DS(on)
(BR)DSS
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
When mounted on 1 inch square copper board, t<10 sec
R
Starting T
Min. Typ. Max. Units
–––
–––
–––
-0.60 –––
G
Min. Typ. Max. Units
––– -0.006 –––
––– .0082 0.012
––– .0125 0.020
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1040 –––
––– 8075 –––
––– 4400 –––
––– 4150 –––
-14
8.4
= 25Ω, I
160
147
–––
–––
–––
––– -100
––– -100
–––
420
140
–––
84
13
37
19
J
= 25°C, L = 1.8mH
AS
-1.2
220
240
= 11A. (See Figure 10)
-88
-2.5
-5.0
–––
–––
–––
125
–––
–––
–––
100
20
55
V/°C
nC
ns
V
nC
pF
V
S
V
Ω
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = 100A/µs
showing the
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
J
J
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 25°C, I
= 25°C, I
= -11A
= -11A
= 0.91Ω ‚
= 6.2Ω
= 0V, I
= -4.5V, I
= -2.5V, I
= V
= -10V, I
= -11.2V, V
= -11.2V, V
= -12V
= 12V
= -10V
= -5.0V ‚
= -10V
= 0V
= -10V
GS
Conditions
, I
D
S
F
Conditions
D
= -5mA
= -2.5A
= -2.5A, V
D
D
D
= -250µA
‚
= -11A
= -11A ‚
= -8.8A ‚
GS
GS
= 0V
= 0V, T
www.irf.com
D
= -1mA
GS
G
= 0V ‚
J
= 70°C
D
S