IRF7220TRPBF International Rectifier, IRF7220TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7220TRPBF
• Description: MOSFET P-CH 14V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7220TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V
• Drain To Source Voltage (vdss): 14V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 125nC @ 5V
• Input Capacitance (ciss) @ Vds: 8075pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 11 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 84 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7220PBFTR

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100
0.1
12
10
10
0.0001
8
6
4
2
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.001
75
SINGLE PULSE
100
0.01
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.1
300
250
200
150
100
50
0
Fig 10. Maximum Avalanche Energy
25
Starting T , Junction Temperature ( C)
1. Duty factor D = t / t
2. Peak T = P
Notes:
50
1
Vs. Drain Current
J
J
75
DM
x Z
1
thJA
P
2
100
10
DM
+ T
TOP
BOTTOM
A
t
1
t
2
125
-4.9A
-8.8A
°
-11A
I D
5
100
150