IRF7220TRPBF International Rectifier, IRF7220TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7220TRPBF
• Description: MOSFET P-CH 14V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7220TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V
• Drain To Source Voltage (vdss): 14V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 125nC @ 5V
• Input Capacitance (ciss) @ Vds: 8075pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 11 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 84 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7220PBFTR

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1000
100
0.1
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1
100
0.1
10
TOP
BOTTOM
1.0
-V
DS
VGS
-4.5V
-4.0V
-3.0V
-2.0V
-1.8V
-1.6V
-1.4V
-1.2V
-V GS , Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T J = 25°C
1.5
1
-1.2V
V DS = -10V
250µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
T J = 150°C
2.0
°
2.5
10
1000
100
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
0.1
10
1
-60 -40 -20
0.1
Fig 4. Normalized On-Resistance
I =
TOP
BOTTOM
D
-V
-11A
DS
T , Junction Temperature ( C)
VGS
-4.5V
-4.0V
-3.0V
-2.0V
-1.8V
-1.6V
-1.4V
-1.2V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
20 40 60 80 100 120 140 160
1
-1.2V
20µs PULSE WIDTH
T = 150 C
J
°
V
°
GS
=
-4.5V
3
10