STD4N62K3 STMicroelectronics, STD4N62K3 Datasheet

MOSFET N-CH 620V 3.8A DPAK

STD4N62K3

Manufacturer Part Number
STD4N62K3
Description
MOSFET N-CH 620V 3.8A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet

Specifications of STD4N62K3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.95 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
450pF @ 50V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.95 Ohms
Drain-source Breakdown Voltage
620 V
Gate-source Breakdown Voltage
3 V
Continuous Drain Current
3.8 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
14 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10648-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD4N62K3
Manufacturer:
STMicroelectronics
Quantity:
2 750
Part Number:
STD4N62K3
Manufacturer:
ST
Quantity:
8 000
Part Number:
STD4N62K3
Manufacturer:
ST
0
Part Number:
STD4N62K3
Manufacturer:
ST
Quantity:
20 000
Features
Application
Description
These devices are made using the
SuperMESH3™ Power MOSFET technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
Table 1.
May 2010
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
STD4N62K3
STU4N62K3
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Improved diode reverse recovery
characteristics
Zener-protected
Switching applications
Type
N-channel 620 V, 1.8 Ω, 3.8 A SuperMESH3™ Power MOSFET
Order codes
STD4N62K3
STU4N62K3
Device summary
620 V
V
DSS
< 1.95 Ω
R
max
DS(on)
3.8 A
Marking
4N62K3
I
D
Doc ID 17549 Rev 1
70 W
Pw
Figure 1.
Package
DPAK
IPAK
DPAK
G(1)
Internal schematic diagram
1
3
STD4N62K3
STU4N62K3
D(2)
S(3)
Tape and reel
DPAK, IPAK
IPAK
Packaging
Tube
Preliminary data
1
2
3
www.st.com
AM01476v1
1/12
12

Related parts for STD4N62K3

STD4N62K3 Summary of contents

Page 1

... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice 3 DPAK Figure 1. Marking Package DPAK 4N62K3 IPAK Doc ID 17549 Rev 1 STD4N62K3 STU4N62K3 DPAK, IPAK Preliminary data IPAK Internal schematic diagram D(2) G(1) S(3) Packaging Tape and reel ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 17549 Rev 1 STD4N62K3, STU4N62K3 ...

Page 3

... STD4N62K3, STU4N62K3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Avalanche current, repetitive or not repetitive (pulse width limited by T Single pulse avalanche energy ...

Page 4

... Parameter Test conditions MHz 496 MHz open drain V = 496 Figure 3) (see DSS DSS Doc ID 17549 Rev 1 STD4N62K3, STU4N62K3 Min. Typ 620 =125 ° µA 3 3.75 = 1.9 A 1.8 Min. Typ. 450 - TBD = TBD - TBD = 3 TBD TBD Max. Unit V 1 µA 50 µA ± ...

Page 5

... STD4N62K3, STU4N62K3 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... AM01470v1 Figure 7. V (BR)DSS 10% 0 AM01472v1 Doc ID 17549 Rev 1 STD4N62K3, STU4N62K3 Gate charge test circuit 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ Unclamped Inductive load test circuit 2200 3.3 µ ...

Page 7

... STD4N62K3, STU4N62K3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 17549 Rev 1 Package mechanical data ® ...

Page 8

... Package mechanical data DIM (L1 8/12 TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 0.80 0. Doc ID 17549 Rev 1 STD4N62K3, STU4N62K3 max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 4.60 9.40 1.20 0068771_H ...

Page 9

... STD4N62K3, STU4N62K3 DIM TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.40 4.70 2.28 4.40 9.35 1 2.80 0.80 0.60 0. Doc ID 17549 Rev 1 Package mechanical data max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6 ...

Page 10

... Doc ID 17549 Rev 1 STD4N62K3, STU4N62K3 REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12 ...

Page 11

... STD4N62K3, STU4N62K3 6 Revision history Table 9. Document revision history Date 05-May-2010 Revision 1 First release Doc ID 17549 Rev 1 Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 17549 Rev 1 STD4N62K3, STU4N62K3 ...

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