STD4N62K3 STMicroelectronics, STD4N62K3 Datasheet - Page 5

• Manufacturer Part Number: STD4N62K3
• Description: MOSFET N-CH 620V 3.8A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STD4N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.95 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.95 Ohms
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10648-2

STD4N62K3, STU4N62K3
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
SD
d(on)
d(off)
RRM
RRM
GSO
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
Doc ID 17549 Rev 1
V
R
(see
I
I
V
I
V
(see
Igs=± 1 mA (open drain)
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 3.8 A, V
= 3.8 A, di/dt = 100 A/µs
= 3.8 A, di/dt = 100 A/µs
= 300 V, I
Figure
= 60 V (see
= 60 V, T
Figure
Test conditions
Test conditions
Test conditions
2)
7)
GS
GS
j
D
= 150 °C
= 1.9 A,
= 10 V
= 0
Figure
7)
Electrical characteristics
Min.
Min.
Min.
30
-
-
-
-
-
Typ.
TBD
TBD
TBD
TBD
Typ. Max. Unit
TBD
TBD
TBD
TBD
TBD
TBD
Typ.
-
Max
15.2
Max. Unit
3.8
1.6
-
Unit
ns
ns
ns
ns
nC
nC
ns
ns
A
A
V
A
A
5/12
V