STD40NF10 STMicroelectronics, STD40NF10 Datasheet - Page 4

• Manufacturer Part Number: STD40NF10
• Description: MOSFET N-CH 100V 50A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD40NF10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 2180pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7969-2; STD40NF10

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
GS(th)
C
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
t
oss
t
rss
iss
gs
gd
r
f
g
(1)
= 25 °C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 18254 Rev 1
I
V
V
V
V
V
V
R
(see Figure 14)
V
V
V
V
V
(see Figure 15)
D
DS
DS
GS
DS
GS
DD
DS
DS
GS
DD
GS
G
= 250 µA, V
=Max rating,T
= 4.7 Ω V
= Max rating
= ±20V
= V
= 10 V, I
= 15 V
= 25 V, f = 1 MHz,
= 0
= 10 V
= 50 V, I
= 50 V, I
Test conditions
Test conditions
Test conditions
GS
, I
,
D
I
D
GS
D
D
D
GS
= 250 µA
= 28 A
= 25 A
= 25 A
= 40 A,
= 10 V
= 0
C
=125°C
Min.
Min.
Min.
100
2
0.025
2180
Typ.
Typ.
83.7
46.5
13.3
17.5
Typ.
298
21
46
54
13
22
3
STD40NF10
Max.
0.028
Max.
Max.
±100
22.5
62
10
1
4
Unit
Unit
Unit
nC
nC
pF
pF
pF
nC
µA
µA
nA
ns
ns
ns
ns
S
V
V
Ω