STD4NK80Z-1 STMicroelectronics, STD4NK80Z-1 Datasheet - Page 10

• Manufacturer Part Number: STD4NK80Z-1
• Description: MOSFET N-CH 800V 3A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD4NK80Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Test circuit
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Figure 16. Unclamped Inductive load test
Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
circuit
resistive load
switching and diode recovery times
Test circuit
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Figure 17. Unclamped Inductive waveform
Figure 19. Gate charge test circuit