STD4NK80Z-1 STMicroelectronics, STD4NK80Z-1 Datasheet - Page 8

• Manufacturer Part Number: STD4NK80Z-1
• Description: MOSFET N-CH 800V 3A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD4NK80Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
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Figure 7.
Figure 9.
Figure 11. Source-drain diode forward
Transconductance
Gate charge vs gate-source voltage Figure 10. Capacitance variations
characteristics
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Figure 8.
Figure 12. Normalized BVdss vs temperature
Static drain-source on resistance