STD4NK80Z-1 STMicroelectronics, STD4NK80Z-1 Datasheet - Page 3

• Manufacturer Part Number: STD4NK80Z-1
• Description: MOSFET N-CH 800V 3A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD4NK80Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 2.
V
Symbol
dv/dt
Symbol
R
ESD(G-S)
I
P
V
DM
R
V
V
T
thj-case
SD
T
I
I
TOT
ISO
DS
GS
stg
thj-a
T
D
D
J
(2)
l
≤ 4A, di/dt ≤ 200A/µs, V
(3)
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD
(HBM-C=100pF, R=1.5KΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s; T
Operating junction temperature
Storage temperature
Thermal resistance junction-
case max
Thermal resistance junction-
ambient max
Maximum lead temperature for
soldering purpose
Absolute maximum ratings
Thermal data
c
= 25°C)
Parameter
DD
Parameter
≤ V
(BR)DSS
C
= 25°C
GS
, T
= 0)
j
≤ T
C
C
=100°C
JMAX.
= 25°C
TO-220
1.56
TO-220/DPAK/
62.5
IPAK
1.89
0.64
12
80
3
-
TO-220FP
Value
300
-55 to 150
5
Value
3000
± 30
800
4.5
TO-220FP
1.89
12
2500
0.21
3
25
Electrical ratings
DPAK
(1)
IPAK
(1)
1.56
100
(1)
W/°C
Unit
V/ns
°C/W
°C/W
Unit
°C
W
V
V
A
A
A
V
V
°C
3/18