IRL3715ZSPBF International Rectifier, IRL3715ZSPBF Datasheet - Page 3

• Manufacturer Part Number: IRL3715ZSPBF
• Description: MOSFET N-CH 20V 50A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3715ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 45 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
1000
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
100
10
10
1
0.1
3.0
TOP
BOTTOM 3.0V
4.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
5.0
T J = 25°C
6.0
1
60µs PULSE WIDTH
Tj = 25°C
3.0V
V DS = 10V
60µs PULSE WIDTH
7.0
T J = 175°C
8.0
9.0
10.0
10
2.0
1.5
1.0
0.5
1000
100
10
-60 -40 -20 0
Fig 4. Normalized On-Resistance
1
Fig 2. Typical Output Characteristics
0.1
I D = 30A
V GS = 10V
TOP
BOTTOM 3.0V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
20 40 60 80 100 120 140 160 180
1
60µs PULSE WIDTH
Tj = 175°C
3.0V
3
10