IRL3715ZSPBF International Rectifier, IRL3715ZSPBF Datasheet - Page 4

• Manufacturer Part Number: IRL3715ZSPBF
• Description: MOSFET N-CH 20V 50A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3715ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 45 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000.0
10000
1000
100.0
100
10.0
1.0
0.1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
Coss
Crss
Ciss
T J = 25°C
1.0
f = 1 MHZ
10
V GS = 0V
1.5
2.0
100
1000
100
Fig 8. Maximum Safe Operating Area
10
12
10
1
8
6
4
2
0
Fig 6. Typical Gate Charge vs.
0
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 12A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
4
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
V DS = 20V
VDS= 10V
8
10
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12
100µsec
10msec
1msec
100
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