IRL3715ZSPBF International Rectifier, IRL3715ZSPBF Datasheet - Page 5

• Manufacturer Part Number: IRL3715ZSPBF
• Description: MOSFET N-CH 20V 50A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3715ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 45 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
0.001
0.01
60
50
40
30
20
10
0.1
10
0
Fig 9. Maximum Drain Current vs.
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
Case Temperature
0.20
0.10
0.05
0.02
0.01
T C , Case Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
LIMITED BY PACKAGE
100
1E-005
125
150
t 1 , Rectangular Pulse Duration (sec)
175
0.0001
τ
J
Fig 10. Threshold Voltage vs. Temperature
τ
J
τ
1
Ci= τi/Ri
2.6
2.2
1.8
1.4
1.0
τ
1
Ci= τi/Ri
-75 -50 -25
R
1
R
1
τ
2
R
τ
2
2
R
2
T J , Temperature ( °C )
0
R
τ
3
3
25
R
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
3
0.001
τ
50
C
τ
Ri (°C/W)
75 100 125 150 175 200
0.942
0.982
0.406
I D = 250µA
0.000145
0.000805
0.004757
τi (sec)
5
0.01